The PSL@GSI has been established for R & D and screening purposes of photo sensors to be used in several FAIR experiments, as well as for any other detectors. In addition the PSL@GSI is supporting different scientific groups by granting access to the PSL infrastructures for the duration of their measurements to be performed.


Non-graduated students from different branches of study temporarily employed at PSL@GSI are involved and integrated in all activities regarding photo sensor characterization (e.g. gain, dark current, QE/PDE and Capacitance) and are participating in actual research proposals.

More detailed information about training can be found here.

Laboratory for temperature controlled screening of semiconductor photo sensors produced in large scale
Temperature controlled setup for sensor capacitance measurements
Thermal annealing station for irradiated photo sensors
View inside one of the annealing ovens